我想了解一下CPM4-0230-0255ES0A 芯片的能力。10并情况下的出流能力，以及是否还有新一代的芯片

I am currently working on the parallel simulation circuit for the internal chips of the module. The official website does not provide the LTspice model and .lib file for the Schottky diode of model CPW5-1200-Z050B. Could you please provide these two files?

Thank you very much!

I need plecs model of CPW6-1200-Z020.

I would be very gratefull, if you could send it to me.

I could not find it in your zip-File " LTspice and PLECS Models "

Thanks in advance.

best regards

I need plecs model of CPW6-1200-Z020.

I would be very gratefull, if you could send it to me.

I could not find it in your zip-File " LTspice and PLECS Models "

Thanks in advance.

best regards

I am looking for a graph of CPM3-0650-0015A bare die SiC MOSFET's switching energies depending on drain current, drain-source voltage and Grid Resistance. Do you have this information available ?

I am also interested in an LTSpice model of the component, if you happen to have one.

Thank you,

B. Pasquet

Hi,

Would plase help me to find a CAD model for CPM3-1200-0075A power MOSFET,or share its pad size.

Please provide datasheet & RoHS confirmation document for below parts:

CPW6-1200-Z010A-GM8

CPW6-1200-Z020A-GM8

Thanks,

Aman Arab.

I am looking for the dynamic characteristic data sets (Vds,Id,Vgs) of C2M0025120D and C3M0015065K to use as my experimental data, but I could only find some curves of the dynamic characteristics in the data table

any help would be appreciated.

Thank you

Could you please provide the product dimension information for DIE CPW6-1200-Z010A.

Center: India Pune

It is not present in the most recent "All Spice Models" .zip.

Thanks in advance

EF

Thanks!I really appreciate any help you can provide.

I am a student from University of Tennessee, Knoxville. Recently, I am trying to test a bare die. However, I find myself in trouble with the soldering of the SiC dies. The finish of source and gate pads are aluminum, which is hard for me to solder in lab. Do you guys have some ideas on how to solder them?

Thanks,
Yang

I am trying to shop for available bare die SiC MOSFETs but keep running into additional 3 letter qualifiers at the end of component numbers that I can't find information about.

For example, one distributor has the CPM3-1200-0016A available with the qualifiers -FY6, -FS6, and -WJ6. What is the difference between these components?

Thank you,

Jude

I am looking for CPM3-1200-0013A detailed data sheet with rise time and fall time data or dv/dt for CPM3-1200-0013A bared die MOSFET.

any help would be appreciated.

Thank you.

The LTSpice model is not available very specific to this die. Please provide LTSpice model of this die also.

i'm working with the CPM3-0900-0010A to design dc-dc converter and i need to model the thermal behavior of the CPM3-0900-0010A transistor but i don't find any details about dimensions and cauer model impedance to carry on the thermal study. Could you help me please.

Thank you

Couple questions:

1. Can you please provide the datasheet for the diode, CPW6-1200-Z050A? Not able to find it anywhere
2. What does the last three digits of the following PNs stand for: CPW6-1200-Z050A-FA6 & CPM2-1200-0025A-FE6?

Thanks,

Kiran

I'm seeking an LT Spice model for a Wolfspeed Gen3 1700V SiC bare die MOSFET. The part number I am working with is CPM3-1700-R020E, and its product homepage is here: https://www.wolfspeed.com/1700v-industrial-qualified-bare-die-sic-mosfets-gen-3/cpm3-1700-r020e/

I've been periodically re-checking the published Wolfspeed LT Spice models for this device, but it doesn't seem to be released yet. Could an LT Spice model be created, or is one scheduled to be created? Thank you!

--Marie Lawson

We are currently developing silicon carbide power modules for electric drive systems in new energy vehicles using the EPM3-1200-0017D1 bare chip. Before the design process, we conducted a reverse analysis of silicon carbide power modules used in the market for electric drive systems in new energy vehicles. We found that most power modules have a gate resistor chip connected to the gate of each silicon carbide chip, and different products use different values for the gate resistor.

So, here are the questions:

1. Why integrate the gate resistor inside the module, even though it adds complexity to the packaging process?
2. How to determine the resistance value of the gate resistor connected to each chip inside the module? Is there a specific calculation method?
3. For the EPM3-1200-0017D1 bare chip, some manufacturers use a gate resistor value of 2 ohms for each chip connected in parallel inside the module. Is this value optimal? What is the recommended gate resistor value for the HybridPACK™ Drive package?

Thank you，

Shawn

What are the safe handling procedures to follow during the SiC MOSFET/Diode Bare dies soldering/assembly process? And where to get the soldering temperature profiles for the dies?

Thanks,

Sridharan

I am trying to understand how a SiC Mosfet bare die soldered on to a PCB. Is this method recommended for 1200V, 30A rated die? Do you recommend a two side PCB-soldering design approach for effective cooling of the die?

And another question I have is about the creepage distance between the drain and source of the die. From the datasheet I see that it is very narrow (0.1mm). How to ensure functional insulation at 1200V?

Thank you,

Sridharan

(He/His/Him, call me Sri)

Would plase help me to find a CAD model for CPM3-1200-0016A power MOSFET.

I am running a PSpice model of an AC-DC converter using your parts. Data generated includes sub-circuits, but as far as I know you do not publish the sub-circuit connections. I want to study the current in the body diode and the power dissipation. So when I look at the trace data available can you confirm which data relate to the body diode.

For example: is I(X_Q1.D1) the current in the body diode of part reference Q1?

Our application is DC circuit breaker design using SiC devices. We plan to use cpm3-1200-0013a bare dies or modules with the same dies (CAB760M12HM3). In our application, we have inductors in series with devices. When we turn off the switch, there will be a voltage spike across devices. We can use TVS diodes or MOV to suppress the voltage for that. However, there is a short voltage spike (Vds) of a few microseconds (image attached). So I request you to let me know the transient voltage withstand capability of the above die and modules along with the pulse time. Thank you.

I downloaded the LTspice model from your website and I can run it in LTspice. However, when I try to run it in ANSYS Circuit editor, it does not work. It looks "ddt" function is not recognized by Ansys. I am wondering if you have an alternative model? I am not sure if this is ANSYS specific problem, or the model is just compatible with LTspice.

Thank you,

Ahmet

Greetings.

We are developing a dc circuit breaker design for which we require high efficiency. We are planning to use cpm3-1200-13A devices. However, the datasheet has not provided the die sizes. Also, we require the dynamic thermal performance of the die at high currents for a short time. To say specifically, When a fault occurs, the current ramps in the die and then we will sense the current and turn it off. So how much of a ramp current can the die bear, and what is the temperature rise in the die? If you have any reference data on the temperature rise based on any layouting. I request you to please provide. Thank you. The dies are really making our design compact. So we are looking forward to using them. Please provide the required details. If any cauer model is developed from experiment results please share. Here I am attaching few images of the desired thermal model we are expecting. THank you

The CPM2-1200-0025A datasheet has two parameters: gate-source voltage (dynamic) - VGSmax, and gate-source voltage (static) - VGSop. Could you please clarify the difference between the two parameters? Also, what is the meaning of the footnote "MOSFET can also safely operate at VGS = 0/+20 V"?

I really appreciate any help you can provide.

Best regards,

Ayodhya