General & Product Selection — Wolfspeed Power Applications Forum https://forum.wolfspeed.com/ Mon, 20 Apr 2026 05:37:44 +0000 en General & Product Selection — Wolfspeed Power Applications Forum [FAQ-GPS-5] Do I need to be wary of EMI when I transition from Si to SiC ? https://forum.wolfspeed.com/discussion/52/faq-gps-5-do-i-need-to-be-wary-of-emi-when-i-transition-from-si-to-sic Thu, 05 Aug 2021 18:08:31 +0000 General & Product Selection SiC_Power_Admin 52@/discussions SiC devices can switch much faster than Si and physics dictates that faster switching speeds can generate higher EMI in the high frequency range. EMI with SiC devices can be mitigated in the same way as with Si devices, such as good PCB layout, optimized EMI filter design, and use of shielding etc. In short, no special mitigation techniques are required.  Our SiC products have been widely used in applications with compliant EMI profiles.

Much of the "noise" in the circuit is due to parasitic elements in the layout that can cause increased ringing and unintended coupling of high dv/dt nodes into other parts of the circuit.  Reducing these parasitic elements is key to reducing noise and EMI.  For examples of good layout practices, be sure to check out Wolfspeed's reference webpage (https://www.wolfspeed.com/products/power/reference-designs). All reference and evaluation boards provide good layout examples for a variety of packages and applications. 

]]> [FAQ-GPS-4] Can the body diode of a SiC MOSFET be used or do I need to add a parallel diode ? https://forum.wolfspeed.com/discussion/45/faq-gps-4-can-the-body-diode-of-a-sic-mosfet-be-used-or-do-i-need-to-add-a-parallel-diode Wed, 04 Aug 2021 21:22:20 +0000 General & Product Selection SiC_Power_Admin 45@/discussions Yes, the body diode of a SiC MOSFET can be used for recirculation currents. For example, in a Totem Pole PFC high-frequency leg, an additional diode is not required due to the superior performance of the body diode

]]> [FAQ-GPS-2] I am trying to choose between Silicon (Si) and Silicon Carbide (SiC) for my next design https://forum.wolfspeed.com/discussion/37/faq-gps-2-i-am-trying-to-choose-between-silicon-si-and-silicon-carbide-sic-for-my-next-design Sat, 31 Jul 2021 01:07:43 +0000 General & Product Selection SiC_Power_Admin 37@/discussions Silicon (Si) and Silicon Carbide (SiC) are very different materials and each have their benefits depending on the applications. Some of the considerations that favor SiC when compared with Si are :  

  • Lower switching loss and lower conduction loss 
  • Much better body diode performance
  • Flat Rdson vs Tj . As an examples, at 650V RdsON of SiC changes by 1.2X vs >2X for from 25C to 150°C
  • Higher max Tj, 175C° vs 150°C fro Si
  • Smaller Coss when compared to Si enables higher frequency and shorter blanking times


]]> [FAQ-GPS-1] What are the benefits of Silicon Carbide (SiC) in Power Applications ? https://forum.wolfspeed.com/discussion/36/faq-gps-1-what-are-the-benefits-of-silicon-carbide-sic-in-power-applications Sat, 31 Jul 2021 00:58:47 +0000 General & Product Selection SiC_Power_Admin 36@/discussions Silicon Carbide (SiC) offers several benefits in power applications as compared to Silicon (Si) or other wide-bandgap materials like Gallium Nitride (GaN). A few of the main benefits are listed below

  • Low switching and conduction losses.
  • Superior body diode performance.
  • High temperature capability and flat on-resistance (RdsON) over temperature.
  • Small output capacitance which enables high frequencies with shorter blanking times in switching converters.
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