Hello Nick,

Thanks for your interest in this product. First, the CAS300M17BM2 is obsolete, so we recommend transitioning to the CAS310M17BM3 for future designs. It uses newer generation MOSFETs which will perform better. Second, it is important to have low-inductance circuit boards when switching SiC devices quickly. We always encourage careful scrutiny of the power layout since reducing inductance will limit ringing dynamics. Ensuring that DC+ and DC- circuit board layers are directly overlapping (see Figured 3 and 4 here) and moving bulk capacitors close to the power modules can significantly improve the observed ringing. Third, ensure you select gate resistors to meet your application needs. Higher gate resistances will decrease your system efficiency but can slow the slew rates which will improve the observed ringing. Please note that some ringing is always expected when switching SiC devices with fast slew rates, so it is possible your student's observe ringing is already at an acceptable level. Fourth, some customers find value in adding snubber capacitors directly across the terminals of the 62 mm power modules. Some capacitors, such as the EPCOS - TDK Electronics B32656S7224K564, already have the proper pin spacing to attach directly across DC+ and DC-.

Thanks,
Chris N.

Nick,

A typical starting value is 0.22 µF.

Thanks,

Chris N.