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Request for Bond Wire Parameters of Discrete SiC Devices (C3M0021120K & C3M0015065K)

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HAo
HAo Contributor Level 1
edited August 12 in Discrete Products

Hello,

I am currently developing a three-phase T-type Neutral Point Clamped (NPC) inverter using Wolfspeed’s discrete SiC MOSFETs (C3M0021120K and C3M0015065K).

To conduct a comprehensive reliability assessment of the inverter, I am employing Bayerer model to predict the lifetime of the devices under mission profiles. This model requires detailed packaging parameters, including:

  • Number of bond wires per die
  • Diameter of bond wires

Unfortunately, these parameters are not available in the public datasheets or application notes. If possible, I kindly request your assistance in providing this information.

Best regards,

Yuhao Wang

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Comments

  • Forum_Moderator
    Forum_Moderator Wolfspeed Employee - Contributor Level 5
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    Thank you for your post, it has been approved and we will respond as soon as possible.

  • TBhatia
    TBhatia Wolfspeed Admin - Contributor Level 5
    edited August 5
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    Hello HAo,

    This information can only be shared under a Non-Disclosure Agreement (NDA). Please use the "Power Sales Support" form on our Contact us page to have the Sales team start the NDA process. Thank you!

  • TBhatia
    TBhatia Wolfspeed Admin - Contributor Level 5
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    Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.

This discussion has been closed.