I am working on a laboratory setup that requires fast high‑voltage switching, and I am interested in purchasing a suitable MOSFET along with a corresponding gate‑driver board.

The application involves applying high‑voltage pulses to a crystal. The system will be connected to a high voltage power supply (ORTEC 556H), and I need to generate pulses up to 1000 V with on‑times of up to 10 microseconds, followed by an off‑state at 0 V. It would be very helpful if I could vary both the pulse repetition rate (up to a practical limit) and the pulse duration.

If possible, I would appreciate your recommendations for a suitable MOSFET and compatible gate‑driver board for this type of operation. Guidance on any relevant trade‑offs or configuration considerations would also be very helpful. I am currently considering:

For the MOSFET: C3M0030170D

For the Gate Driver Board: one of:

CGD1700HB2M-UNA,CGD1700HB2M-UNA-R1, CGD1700HB2M-UNA-R2

Thank you and I look forward to your suggestions.