Hello Wolfspeed Team,

I am writing to seek clarification regarding the Gate-Source Leakage Current (IGSS) specification for the C2M0045170D.

The datasheet specifies a maximum IGSS of 600 nA at VGS = 20V and VDS = 0V. However, our customer’s bench test results show a significant deviation from this limit.

[Measurement Details]
Using a high-precision picoammeter at room temperature (25°C), we consistently measured a DC steady-state leakage current in the range of several pA (pico-amperes) at VGS = 20V.

Given the three-order-of-magnitude difference between the datasheet Max (nA) and the actual measurement (pA), the customer is concerned about whether these extremely low values are considered normal or if they might indicate a potential measurement error or an unexpected device characteristic. This is particularly important for them as they are evaluating this device for a series-parallel configuration and need to ensure long-term reliability and uniform behavior.

Could you please provide insight on the following points?

1. Typical Value: What is the typical IGSS value at 25°C? Is the pA range expected for a healthy device under these conditions?
2. Spec Definition & Guardband: Does the 600 nA limit represent a DC steady-state value, or does it include a testing guardband to account for equipment resolution, temperature variations, and high-volume production margins?
3. Transient vs. Steady-state: Does the datasheet value account for any initial transient or displacement current during the gate-charging phase, or is it strictly for steady-state leakage?
4. Measurement Methodology: Is there any specific test duration or specialized equipment setup recommended by Wolfspeed to correlate with the datasheet limits?

We would appreciate your expert guidance to help our customer move forward with confidence in their SiC-based design.

Best regards,

Atsushi Takayanagi
Field Application Engineer
Richardson RFPD