Characterization of parasitic capacitances of CAS300M12BM2 module
Hi,
I am trying to model the CAS300M12BM2 SiC MOSFET module taking into account the voltage-dependant behaviour of the parasitic capacitances in order to reach a Matlab/Simulink simulation as close as possible to reality, so proper total charge gate and turning on/off dynamics are obtained.
To do so, I wonder if you could provide me the following data, which seems to have a noticeable impact in the accuracy of the dynamical behavior, according to some consulted works and papers:
· Vdg vs Cdg at negative Vdg values, that is when the MOSFET is fully turned on.
· Vgs vs Cgs. When obtaining Cgs from the capacitances provided on the datasheet, it is inferred that Cgs is almost constant on the whole Vds range, but as far as I know it does vary a bit depending on the applied Vgs voltage.
Thank you in advance
