Questions about the peripheral circuit of C3M0120090J？

MaruOkada

Dear support member,

I have a question about SiC MOSFETs and diodes.

The products under consideration are C6D10065E, C3M0120090J.

We are considering replacing Si MOSFETs and diodes with SiC MOSFETs and diodes（C6D10065E, C3M0120090J）.

In order to take advantage of the performance of SiC, we think it is necessary to change the switching speed and carrier frequency.

Q1.

Which part of the circuit should be changed to take advantage of SiC performance?

Best regards.