SpeedFit™ Design Simulator
Simulate and evaluate the performance of SiC-based power circuits and determine the right SiC device in seconds.
Start a SimulationSome questions about datasheet
1. The VDSmax in the datasheet of CAB450M12XM3 limits the voltage between terminals G and S. However, in fact, SiC MOSFET will produce obvious voltage overshoot during the turn-off transient, such as 100V. If VGSmax=1200V is the limit of VDS, does it consider this 100V? Does it mean that a SiC MOSFET in CAB450M12XM3 can only work at 1100V drain-source voltage vds? Or is 1200V actually a limitation on vds?
2. Is VGS (th) the voltage between the internal pins g and s of SiC MOSFET? Because of the existence of driving resistance, vgs and VGS are quite different. According to the simulation, when VGS reaches 7 or 8 V, MOSFET starts to conduct, but the 2.5V given in the data table should correspond to Vgs?
2. In the datasheet of CAB450M12XM3, the drain current can reach 450A, but the maximum current of the body diode can reach 225A，as shown in the figure below.
If the body diode is used as the freewheeling diode of SiC MOSFET, it is easy to cause accidents. So is it necessary to parallel an SBD in practical application?