Reverse Recovery Loss in PLECS for SiC MOSFET Body Diode C3M0021120K

THK

Hello,

I have a question regarding the discrete SiC-MOSFET C3M0021120K. I would like to use it in a PLECS simulation and have relied on the PLECS Device Models provided by you, importing the thermal descriptions of the MOSFET and its associated body diode into PLECS.

Unfortunately, the PLECS model for the body diode does not contain any information regarding turn-off energies (Body Diode Reverse Recovery behavior). I also couldn't find a value for Erec in the corresponding datasheet.

If available, could you please provide me with the appropriate values for the Body Diode Reverse Recovery behavior? If possible, for different temperatures, blocking voltages, and currents, so that I can build a Look-Up Table from it?

Best regards,

THK