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LTspice E3M0075120J2 Temperature Rise Simulation

tilden
tilden Contributor Level 1
edited July 2024 in Discrete Products

Hello Wolfspeed Team,

I'm working on a reference design and would like to promote your SiC MOSFET.

I'm trying to find the junction temperature rise from passing 5.67-A for 300-ms through E3M0075120J2 drain-to-source to make sure it stays below abs max. I know for a continuous DC temperature rise, I can use this equation, but seems unrealistic for 300-ms ON time.

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I tried to simulate in LTspice and see 14°C rise for 300-ms, wanted to double check if I am simulating this correctly. I'm not confident because I tried to do a 60 second simulation and see 4000°C rise when it should not be greater than 199°C. Please take a look and would also like to know how the math works for calculating a transient Trise, I'll need to explain this in the reference design.

300 ms Trise Sim

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60 sec Trise Sim

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Best regards,
Tilden Chen

Solid State Relays | Applications Engineer

rolfhorn66
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