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Start a SimulationEon/Eoff datasheet values clarification
Hello,
I'm running simulations to compare losses on a three phase inverter using IGBT and SiC MOSFET.
I have three questions about the information presented on the SiC MOSFET datasheet (C3M0015065D for example).
The datasheet presents the Eon and Eoff for either the switching process to a SiC diode or a MOSFET body diode as the FWD.
Does this switching energy (Eon/Eoff) contain both the v-i overlapping losses and Coss losses?
The Eon is higher for the case the FWD is a MOSFET body diode. Is it because the reverse recovery current in the body diode is higher than in a SiC diode?
Are the values of the body MOSFET reverse recovery energy available?
Thank you