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Pulse Width and Pulse Period Typical Value for the I-V characteristics of SiC MOSFET

Hassan
Hassan Contributor Level 1
edited November 2024 in Discrete Products

Hi,
I am analyzing the data sheet of Silicon Carbide Power MOSFET "C3M0015065K". I am particularly interested in Diagram 1: Output Characteristics TJ = -40 °C. I believe these I-V characteristics have been measured with the pulsed gate voltage. I want to know what is the pulse with and the pulsed period of the gate voltage applied is?

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