Junction Temperature Prediction and Verification for the MOSFET and its Body Diode

Hello,
I find the MOSFET and its body diode for SiC discrete power device have the same thermal parameters, provided by the PLECS model. Does that make sense, please?
In addition, by building the thermal circuit model or PLECS simulation, the junction temperature prediction for the MOSFET and its body diode can be achieved, respectively. But how should I validate each separately, since I can only observe case temperature.
Thanks,
Yuhao Wang
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Hello Hao,
The body-diode is an intrinsic diode to the MOSFET and is not a separate component. It's an inherent part of the MOSFET structure due to how the PN junctions are formed. Since it is the same die the junction to case thermal impedance will be the same for the MOSFET and body-diode and they will have the same junction temperature. Hope this helps, thank you!
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