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CAB450M12XM3 Switching Energy vs. external gate resistance

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Martin_L
Martin_L Contributor Level 1
edited July 1 in Module Products

Hello,

i think i've found a mistake in the datasheet of CAB450M12XM3 (Rev. 3, June 2024). Figure 15 should show the relationship between switching energies and external gate resistance but it shows the same information as figure 13 (Switching Energy vs. Drain Current (VDD = 800 V)). Is there already a newer version of this datasheet where this is fixed?

Best regards

Martin_L

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  • Forum_Moderator
    Forum_Moderator Wolfspeed Employee - Contributor Level 5
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    Thank you for your post, it has been approved and we will respond as soon as possible.

  • AustinC
    AustinC Wolfspeed Admin - Contributor Level 4
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    Hello Martin_L,

    Yes, you are correct; on the latest revision (Rev 3) of the CAB450M12XM3 datasheet, Figure 15 and Figure 16 were not updated properly and are incorrect. We are working to correct this in an official revision update for the datasheet, but in the meantime, please see the correct figures below.

    Figure 15 MOSFET Switching Energy vs. External Gate Resistance

    image.png

    Figure 16 Reverse Recovery Energy vs. External Gate Resistance

    image.png

    Best Regards,

    Austin C.

  • TBhatia
    TBhatia Wolfspeed Admin - Contributor Level 5
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    Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.

This discussion has been closed.