C6D04065E Thermal Characteristics

aeies

Hi,

I am trying to run a thermal simulation of a board using the C6D04065E devices in Cadence's Celsius PowerDC simulator. The only thermal characteristic given in the diode datasheet is the R_JC figure, which is 2.89 C/W. The Cadence simulator has several settings for choosing thermal characteristics, see attached screenshots.

Can you provide data on the junction-board thermal resistance (or maybe guesstimate) and clarify if the junction-case number is referenced to the package top or bottom?

// Thanks

Forum_Moderator

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TBhatia

Hello aesis,

Thank you for your questions.

1. The Rth,j-c from the datasheet is the thermal impedance from the junction to bottom-case of the device.
2. You can estimate the case to board impedance for the E package using:
   
   

Where L is the thickness of the solder, A is the assumed thermal transfer area and k is the thermal conductivity of solder used.

Assuming a general solder thickness of 0.1mm, the approximate area of the case of E package= 25mm^2 and k for lead-tin solder to be 50 W/m.K: the Rth from case to board is 0.08 K/W.

The total Rth,j-b (junction to board) = Rth,j-c + 0.08 K/W (approximate)

You can find more details here:

Thermal Management of Bottom-Side Cooled Surface Mount Devices and Design Considerations

Let me know if you have any other questions. Thank you!

aeies

Hi TBhatia,

Thank you for your answer. For modelling completeness, do you have a number for the thermal resistance to the package top?

// Thanks

TBhatia

Hello Aeies,

I checked if we have modelled that but we don't have any data on this package or any similar package. You can assume that the the thermal impedance from the junction to top of the package will be very large so there will be no significant heat escape from the top of the package. Thank you!

TBhatia

Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.