Power Cycling Capability curves (Nf vs ΔT) for discrete SiC MOSFETs in TO-247 packages

relab22

Hello everyone,

I am currently working on a lifetime estimation for a SiC-based power converter design. I am specifically looking for Power Cycling Capability data for discrete SiC MOSFETs in TO-247 packages.

While power modules usually have well-documented Nf curves in their application notes, finding similar "to-failure" data for discrete SiC components is proving to be difficult.

I am looking for an analytical lifetime model for discrete SiC devices, ideally using the CIP2008 formula or a similar approach with clearly defined parameters.

Any insights, documentation, or links to technical papers would be greatly appreciated,

Best regards

Forum_Moderator

Thank you for your post, it has been approved and we will respond as soon as possible.

simon_lin

Hi Relab22, thanks for reaching out, we also utilizes a modified CIP2008 model for SiC Mosfet. you can refer to below IEEE file for reference.

Validity of power cycling lifetime models for modules and extension to low temperature swings, J. Lutz et al. 2020