SIC Mosfet Ltspice Models topic

carrefer

doubt.PNG

I would like to know if there is a way to "separate" the drain current by the Mosfet and the diode in antiparallel. This is because I am calculating the switching losses of a quasi-resonant converter (Dual active Bridge) with soft switching and since the mosfet model incorporates the intrinsic diode, when soft switching occurs a negative power peak appears due to the diode. Then, when calculating the average instantaneous power value, this is subtracted from the hard switching peak, which is incorrect because the negative power "peak" is not part of the mosfet losses.

carrefer

anyone who would help me pls?

AAnders

Hello,

I'd like to ask a clarification question to make sure we are addressing the concern that you have raised. Can you confirm that the negative power spike circled in this image is the area that you concerned about?

Clarification.JPG

We do not typically provide models that separate the channel and body diode behavior, but we may be able to do so if needed.

carrefer

Yes i'm talking about the negative peak.

That would be very nice because what i need to do now is it to modify the drain current provided by the mosfet model and to separate it depending on if current is positive (flowing throught the mosfet) or negative (Flowing through the diode). That's the only way to calculate the switching losses due to the mosfet

AAnders

Hi carrefer,

We have provided the model you requested in a private message. I will close this post now.

Thanks!