SpeedFit™ Design Simulator
Simulate and evaluate the performance of SiC-based power circuits and determine the right SiC device in seconds.
Start a SimulationOptimum gate resistance value
Hi,
for my application (three-phase inverter) I am using six CRD-001 SiC MOSFET Isolated Gate Driver and six C2M0160120D Silicon Carbide Power MOSFETs.
On the driver card, only R2, R4 and R5 are populated with 20 Ohm, which gives 6.66 Ohm gate resistance. The CRD-001 document says: "R9-R15 and diode D2 can be populated to provide optimum turn-on and turn-off performance". How to determine the optimum gate resistance value and if I need a diode or not? Max. DC voltage is 700 V, max, current is 5 Arms line and switching frequency is 6 kHz.
In my application, I am having an issue with serial communication breaking down and the noise might be coming from MOSFET switching. Now trying to reduce.
Thank you in advance.