SiC MOSFET compared to Si IGBT/Diode

nsivaece

we are asked to develop a power module for a high-speed compressor application. The customer is requesting a high switching frequency in the range of 12-16kHz. Output current 300A and 1200V.

·     what are the benefits of SiC MOSFET compared to Si IGBT/Diode in these applications.

I am new to SiC do you have some information to share for me to learn or understanding.

AAnders

Hello,

The biggest benefit you will see when changing to SiC compared to an IGBT in this application is a dramatic reduction in switching losses. This will allow you to use a smaller module and smaller heatsink solution compared to an IGBT approach. You can also reduce the dead-time to somewhere in the 350ns-1000ns range depending on your gate drive which can reduce distortion in the output current. We have created a reference design that may be of interest to you. Take a look at our 300kW inverter design at the link below:

https://www.wolfspeed.com/products/power/reference-designs/crd300da12e-xm3/

Let me know if you have any additional questions.

Thanks,

Adam

SiC_Power_Admin

Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.