LTspice model

oming0731

Hi, this is Mingi.

I'd like to simulate C3M0015065D in LTspice.

so I downloaded the file and ran it.

To check turn-off of the switch, I compared my simulation results and datasheet.

It is quite different... (simulation 565.95µJ vs datasheet700µJ, condition : VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC FWD = Internal Body Diode of MOSFET)

What made this difference? Please let me know.

Here are the simulation configuration and results.

TBhatia

Hello, thank you for your message. A member of our technical team is looking into your questions and we will respond shortly.  

ZMiller

Hi Mingi,

The datasheet switching energy includes the influence of board parasitic inductance and capacitance and we build our models to match. As a result, when you run a DPT simulation in LTSpice without the additional parasitic elements, you will see that the simulated switching energy is typically lower than what is reported on the datasheet.

I recommend adding 10pF of capacitance between the gate and drain of the MOSFET and ~2nH of inductance at source of the device. These aren't exactly what you would find in the board, but they're reasonable estimates that should yield much more accurate results.

Thanks,

Zack

TBhatia

Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.