SpeedFit™ Design Simulator
Simulate and evaluate the performance of SiC-based power circuits and determine the right SiC device in seconds.
Start a Simulation[FAQ-GD-4] Do I need short-circuit protection? How is it different than IGBT desat protection?
The need for short-circuit protection depends on the application and reliability requirements. SiC MOSFETs are capable of withstanding several microseconds of short circuit conditions (MOSFET gated on with minimal resistance or inductance to limit the rate of current rise) where the drain current rises very quickly. However, in order to prevent damage to the MOSFET, the fault condition must be detected and the MOSFET turned off quickly.
Although SiC MOSFETs do not exhibit desaturation behavior like IGBTs, the voltage across the drain to source of the part will increase as the current increases. Therefore, a circuit very similar to an IGBT desat detection circuit can be used to detect the fault condition. The voltage levels and timing requirements are different for SiC MOSFETs. We have worked closely with our gate driver partners at Analog Devices, Skyworks, Texas Instruments, NXP, and Broadcom to develop robust short-circuit protection solutions. Please contact your FAE for additional resources regarding short-circuit protection.
