Questions about the peripheral circuit of C3M0120090J？

MaruOkada

Dear support member,

I have a question about SiC MOSFETs and diodes.

The products under consideration are C6D10065E, C3M0120090J.

We are considering replacing Si MOSFETs and diodes with SiC MOSFETs and diodes（C6D10065E, C3M0120090J）.

In order to take advantage of the performance of SiC, we think it is necessary to change the switching speed and carrier frequency.

Q1.

Which part of the circuit should be changed to take advantage of SiC performance?

Best regards.

TBhatia

Hello, thank you for your message. A member of our technical team is looking into your questions and we will respond shortly. 

MaruOkada

Dear TBhatia and support member,

How is your progress?

I look forward to hearing back from you.

Best regards.

jshao

Hi dear customer,

If you have more detail about your circuit, such as topology, schematic, etc, we can provide better suggestion.

In general, if you want to use SiC devices to replace Si devices:

1. You can reduce heatsink size due to higher efficiency.
2. You can increase switching frequency so you can reduce magnetic size.
3. You may need to change gate driver which can tolerate higher dv/dt. Wolfspeed has lots of info on gate driver, e.g. https://www.wolfspeed.com/knowledge-center/article/a-designer-s-guide-to-silicon-carbide-gate-drive-considerations/
4. Do you have our FAE contact in JP? The best way is to have detail review your application and circuit.

Thanks,

Jianwen

MaruOkada

Dear Jianwen,

Thank you for your answer.

I'll see if I can provide a schematic.

Could you please wait?

Best regards.

MaruOkada

Dear Jianwen,

Thank you for your answer.

I'll see if I can provide a schematic.

Could you please wait?

Best regards.

MaruOkada

Dear Jianwen,

Sorry for keeping you waiting.

I solved it in your previous answer.

Best regards.