[FAQ-GPS-5] Do I need to be wary of EMI when I transition from Si to SiC ?
SiC devices can switch much faster than Si and physics dictates that faster switching speeds can generate higher EMI in the high frequency range. EMI with SiC devices can be mitigated in the same way as with Si devices, such as good PCB layout, optimized EMI filter design, and use of shielding etc. In short, no special mitigation techniques are required. Our SiC products have been widely used in applications with compliant EMI profiles.
Much of the "noise" in the circuit is due to parasitic elements in the layout that can cause increased ringing and unintended coupling of high dv/dt nodes into other parts of the circuit. Reducing these parasitic elements is key to reducing noise and EMI. For examples of good layout practices, be sure to check out Wolfspeed's reference webpage (https://www.wolfspeed.com/products/power/reference-designs). All reference and evaluation boards provide good layout examples for a variety of packages and applications.