Determination of Internal Gate-Source Resistance Value in Power Module Design Process

PCShawn

Hello Wolfspeed team, Good day!!

We are currently developing silicon carbide power modules for electric drive systems in new energy vehicles using the EPM3-1200-0017D1 bare chip. Before the design process, we conducted a reverse analysis of silicon carbide power modules used in the market for electric drive systems in new energy vehicles. We found that most power modules have a gate resistor chip connected to the gate of each silicon carbide chip, and different products use different values for the gate resistor.

So, here are the questions:

1. Why integrate the gate resistor inside the module, even though it adds complexity to the packaging process?
2. How to determine the resistance value of the gate resistor connected to each chip inside the module? Is there a specific calculation method?
3. For the EPM3-1200-0017D1 bare chip, some manufacturers use a gate resistor value of 2 ohms for each chip connected in parallel inside the module. Is this value optimal? What is the recommended gate resistor value for the HybridPACK™ Drive package?

Thank you，

Shawn