IGBT vs SiC Power loss comparison

Eduard

hi,

I'm comparing power loss of IGBT IKZA50N120CH7 vs. SiC MOSFET C3M0040120K. But I noticed that in the model of the MOSFET body diode, switching loss is all 0, only conduction loss is there. So here my question: Where is the body diode switching loss accounted? Is Qrr loss modeled somewere? Or Qrr loss is neglected?

Thanks for your answer.

Forum_Moderator

Thank you for your post, it has been approved and we will respond as soon as possible.

Urvi_Ahluwalia

Hi Eduard,

The impact of Qrr on the opposite device (non-freewheeling) is included in the Eon values of the opposite device.

The impact of Qrr loss on the free-wheeling device: When you have very small values for Err (which is true for relatively high value of Rg) you can get very small energies injected into the thermal system. These cases have caused convergence issues in the past, so this value is overlooked in our thermal models currently. We are working on some updates regarding this.

If you need to add these values to your models, we would be happy to assist you in providing the data for your operating point via email or private messaging. Could please provide more details about your simulations like Id, Vds and Tj? You can send us these details via private message.

Regards,

Urvi

TBhatia

Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.