Question about the calculation of reverse recovery time in MOSFET datasheet

sang960326

Hello, I would like to ask about the standard for calculating the reverse recovery time (trr) of a switching device such as a MOSFET.
When I check the datasheet, it says about the test set-up, but it doesn't seem to specify the standard for calculating trr.
For example, the time when trr starts is when the current flowing through the body diode becomes 0A, and the time when it ends is 10% of Irrm.
If there is, please let me know.

Forum_Moderator

Thank you for your post, it has been approved and we will respond as soon as possible.

TBhatia

Hello sang960326,

We follow the IEC 60747-8-4 standard for the test circuit for measuring the reverse-recovery time of the body-diode of the MOSFET.

Since the IEC 60747-8-4 and JEDEC JESD24-10 standards give slightly different methodologies (different Ids points to project a zero crossing) of calculating the time, we calculate Trr starting from when the body-diode current first becomes 0 to when it crosses zero again for the first time after reaching the peak reverse recovery current. Most times, there will be current oscillation due to the parasitics of the PCB and therefore this gives a good estimate of the reverse-recovery time as shown below:

Let me know if you have any other questions. Thank you!

TBhatia

Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.