Elevated Shut-off Loss in C3M0045065D MOSFET Exceeding Specified Values

SavoyardVicar

Hello everyone,

I am conducting a double pulse circuit simulation using C3M0045065D in LTspice and observing that the shut-off loss is significantly lower than the values stated in the manual. The same model circuit yields accurate results with other MOSFETs. Could anyone provide insights or suggestions on why this discrepancy might be occurring with the C3M0045065D? Any help would be greatly appreciated.

Thank you!

Forum_Moderator

Thank you for your post, it has been approved and we will respond as soon as possible.

Mhusain

Hello,

Thank you for sharing your observations.

The switching losses depend on various factors like board parasitics and gate driver characteristics. To improve simulation accuracy, we suggest:

-Incorporating circuit parasitics like path inductances and resistances to enhance the accuracy of the simulations.
-Ensuring accurate gate driver models with appropriate rise and fall times.

Additionally, I would also like to mention that the current MOSFET models do not fully account for reverse recovery behavior and are partially tuned to match switching losses, which may result in optimistic energy loss estimations.

Regards

TBhatia

Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.