C3M0160120J Ltspice model

matbob

Hello,

I am doing an Ltspice simulation using the C3M0160120J Spice model. I found that the values of some of the parameters provided the in datasheet do not match with the Spice model. For example:

1. Thermal Resistance from Junction to Case (Rjc ) provided in the datasheet is 1.38 C/W but in the model, this is about 1 C/W.
2. Internal gate resistance (RG(int)) provided in the datasheet is 8 ohms, but in the model it is 2.6 ohms.

Which values are correct?

Thanks!

Forum_Moderator

Thank you for your post, it has been approved and we will respond as soon as possible.

Mhusain

Hello,

Thank you bringing this discrepancy to our attention. We apologize for the issue you are experiencing. The model is likely an older version, which may not reflect the latest datasheet parameters.

Here is the updated version of the C3M0160120J Spice model.

C3M0160120J.lib

Let us know if you have any further question or need additional assistance.

Regards

matbob

Hello,

Thank you for providing the updated model.

I tired using the new model in my simulation, however, the simulation fails with "Time step too small" message. Reverting to the older model or some other device model works.

Can you please check the device model once again. I am attaching a sample Ltspice simulation here. It is a simple half-bridge switching at 50 percent duty cycle.

sim_hb.zip

Thanks!

Mhusain

Hello,

Thanks for sharing the simulation file. We have updated the device model and attached it here, along with the waveforms and simulation file.

C3M0160120J.lib

basics_02.asc

Additionally, we recommend using the solver settings shown in the image below. Let us know if you encounter any further issues or need additional assistance.

Regards

matbob

Hello,

Thanks for providing the new model and the simulation settings. The new settings have helped us in running the simulation faster.

In our application, we are trying to optimize the switching loss in the MOSFET and hence Coss is an important parameter. When we measure the Coss of the MOSFET model you have shared, we are obtaining a value of 71 pF, but the datasheet states this to be 39 pF. The following circuit was used for the simulation:

An AC signal of 25 mV (RMS), 1 MHz frequency with 1000 V DC offset was applied across the drain and source with gate shorted to the source. The drain current was obtained. The calculated Coss comes around 71 pF.

Can you please validate this simulation and the model parameters related to Coss?

Thanks.

Mhusain

Hello,

We have tuned the model for the C3M0160120J to match the Coss value specified in the datasheet. Attached are the updated model, the test bench used to measure the capacitance, and the corresponding results. Please let us know if there's anything else we can assist you with.

C3M0160120J.lib

Coss_measurement.asc

Regards

TBhatia

Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.