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Junction Temperature Prediction and Verification for the MOSFET and its Body Diode

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HAo
HAo Contributor Level 1
edited July 23 in Discrete Products

Hello,

I find the MOSFET and its body diode for SiC discrete power device have the same thermal parameters, provided by the PLECS model. Does that make sense, please?

In addition, by building the thermal circuit model or PLECS simulation, the junction temperature prediction for the MOSFET and its body diode can be achieved, respectively. But how should I validate each separately, since I can only observe case temperature.

Thanks,

Yuhao Wang

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  • Forum_Moderator
    Forum_Moderator Wolfspeed Employee - Contributor Level 5
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    Thank you for your post, it has been approved and we will respond as soon as possible.

  • TBhatia
    TBhatia Wolfspeed Admin - Contributor Level 5
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    Hello Hao,

    The body-diode is an intrinsic diode to the MOSFET and is not a separate component. It's an inherent part of the MOSFET structure due to how the PN junctions are formed. Since it is the same die the junction to case thermal impedance will be the same for the MOSFET and body-diode and they will have the same junction temperature. Hope this helps, thank you!

  • TBhatia
    TBhatia Wolfspeed Admin - Contributor Level 5
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    Hi, I hope that this answered your question. I will close this discussion for now but if you have a follow up question, please "Start a New Discussion" and we would be glad to support you further.

This discussion has been closed.