Hello,

I find the MOSFET and its body diode for SiC discrete power device have the same thermal parameters, provided by the PLECS model. Does that make sense, please?

In addition, by building the thermal circuit model or PLECS simulation, the junction temperature prediction for the MOSFET and its body diode can be achieved, respectively. But how should I validate each separately, since I can only observe case temperature.

Thanks,

Yuhao Wang