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CAB600M33LM3 voltage spike on the high side gate after reverse recovery

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ralphdeguzman
ralphdeguzman Contributor Level 1
edited November 10 in Module Products

I am working on a double pulse measurements for SiC module CAB600M33LM3 module. I used Rg,off=1.5ohm and Rg,on=2.5ohm and my setup stray inductance is around 12nH. During reverse recovery of the high side diode (Applying double pulse at low side gate), I observe a voltage spike at the high side gate of around 5V peak. This is not observed when I check the reverse recovery of the low side diode. Please see waveform and help to analyze if this is normal or what to do to eliminate such voltage spike. I dont want to risk going into higher drain current because of the possibility of short circuiting the module when this spike really caused the high side switch to turn-on.

HS_RR_1800V_200A_25C.png

Channel 2: High side Vgs

Channel 3: High side Vds

Channel F1: High side Drain Current

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  • Forum_Moderator
    Forum_Moderator Wolfspeed Employee - Contributor Level 5
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    Thank you for your post, it has been approved and we will respond as soon as possible.

  • ARK
    ARK Wolfspeed Employee - Contributor Level 1
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    Hello Ralph

    Please share your company email ID and we can reach out to discuss your observations in more detail and provide the solution.

This discussion has been closed.