Reverse Recovery Loss in PLECS for SiC MOSFET Body Diode C3M0021120K

THK

Hello,

I have a question regarding the discrete SiC-MOSFET C3M0021120K. I would like to use it in a PLECS simulation and have relied on the PLECS Device Models provided by you, importing the thermal descriptions of the MOSFET and its associated body diode into PLECS.

Unfortunately, the PLECS model for the body diode does not contain any information regarding turn-off energies (Body Diode Reverse Recovery behavior). I also couldn't find a value for Erec in the corresponding datasheet.

If available, could you please provide me with the appropriate values for the Body Diode Reverse Recovery behavior? If possible, for different temperatures, blocking voltages, and currents, so that I can build a Look-Up Table from it?

Best regards,

THK

Forum_Moderator

Thank you for your post, it has been approved and we will respond as soon as possible.

Urvi_Ahluwalia

Hi THK,

We are looking into your request to see how we can help you best. We'd like to know more about your topology and operating conditions to be able to help you better, please look out for an email from us.

You can refer to this post for additional comments on reverse recovery data in PLECS device models: https://forum.wolfspeed.com/discussion/665/igbt-vs-sic-power-loss-comparison

Thanks,

Urvi

THK

Hi Urvi,

Thank you for your prompt response. I am an electrical engineering student, and for my master's thesis, I need to design a 3-LVL-ANPC-SiC-Voltage-Source-Inverter and simulate it in PLECS, focusing on the power loss/junction temperatures under various modulation strategies (Same-Side-Clamping, Opposite-Side-Clamping, Full-Path-Clamping, etc.) and modulation indices (ma). I plan to use the C3M0021120K MOSFET switches for this purpose.

My operating conditions are as follows:

As different modulation strategies will experience varying reverse recovery losses in the body diodes, I would like to model and analyze these effects. For this purpose, it would be very helpful if you could provide me with the relevant measurement data so I can create a look-up table for Eoff_Body_Diode = f(v,i,Tj) in the thermal descriptions. I would greatly appreciate your response on this matter. Thank you in advance!

Best regards,

THK

THK

Hello,

I would like to kindly remind you to take another look at my question. If possible, I would still be very happy to receive an answer from you regarding my topic.

Best regards

THK

Urvi_Ahluwalia

Hi THK,

We have shared the available reverse recovery loss data with you via email. I hope this answered your question.